California State Polytechnic University Pomona Electrical An ✓ Solved

California State Polytechnic Univerity Pomonaelectrical And Computer

California State Polytechnic University, Pomona Electrical and Computer Engineering Department ECE 220 Lab Experiment #6 MOSFET Transistor Current-Voltage Characteristics

Assignment Instructions

Study the transfer characteristics of the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) through laboratory experimentation. Construct the circuits as specified to determine the relationship between the drain current (ID) and the gate-source voltage (VGS) for an N-Channel MOSFET. Measure and plot ID versus VGS to identify the threshold voltage (VTN). Subsequently, explore the relationship between drain current (ID) and drain-source voltage (VDS) by varying the gate-source voltage at different levels above VTN, recording and plotting the data for analysis. Perform all measurements using specified components and follow the experimental procedures as outlined.

Sample Paper For Above instruction

The investigation of the current-voltage characteristics of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) is fundamental in understanding their operation and applicability in electronic circuits. This paper details a laboratory experiment designed to measure and analyze the transfer and output characteristics of an N-Channel MOSFET, focusing on the relationships between drain current (ID), gate-source voltage (VGS), and drain-source voltage (VDS). These parameters are critical in elucidating the behavior of MOSFETs, which serve as essential components in modern electronic devices.

The experiment begins with the construction of the transfer characteristic circuit, as depicted in Figure 1 of the experimental procedure. Utilizing a CD4007 integrated circuit, which contains MOSFETs, and a 1KΩ resistor, the setup involves connecting the drain (pin 14) to a 10V supply voltage, with the body and source terminals connected to ground. The gate voltage (VGS) is swept from 0 to 5V using a sinusoidal input at approximately 1kHz frequency. To accurately measure the drain current (ID), a suitable ammeter is incorporated into the drain circuit. The primary objective at this stage is to plot ID versus VGS, thereby enabling the determination of the threshold voltage (VTN). The threshold voltage marks the point at which the MOSFET begins to conduct significantly, a critical parameter in device operation.

Next, the experiment shifts focus to examining the output characteristics, which relate the drain current (ID) to the drain-source voltage (VDS). Maintaining the same circuit configuration and biasing conditions, the gate-source voltage is set to VTN + 1V, and VDS is varied from 0 to 10V using a function generator. Multiple measurements are taken at different VGS levels—specifically, VTH + 1.25V, VTH + 1.5V, VTH + 1.75V, and VTH + 2V—to generate a comprehensive set of current-voltage curves. These curves illustrate the device’s behavior in saturation and linear regions, providing insight into its transfer and output characteristics under varied biasing conditions.

Data analysis involves plotting ID against VDS for each VGS level, allowing for the identification of key parameters such as drain conductance, transconductance, and saturation current. Such analysis not only verifies theoretical models of MOSFET operation but also contributes to understanding their practical application in amplifiers, switches, and digital logic circuits. Ensuring precise measurements and controlling experimental variables are crucial in obtaining reliable data that accurately represent device performance.

This experiment underscores the importance of MOSFET parameters in electronic circuit design. The threshold voltage, in particular, influences the switching characteristics and power consumption of MOSFET-based devices. Understanding the transfer and output characteristics helps engineers optimize circuits for efficiency, reliability, and performance. The educational value of this laboratory work extends to foundational electronics courses and practical engineering applications, reinforcing theoretical knowledge with empirical data.

References

  • Weste, N. H., & Harris, D. (2010). CMOS VLSI Design: A Circuits and Systems Perspective. Pearson.
  • Sze, S. M., & Ng, K. K. (2006). Physics of Semiconductor Devices. Wiley-Interscience.
  • Tang, K., & Kumar, A. (2018). Fundamentals of Semiconductor Devices. Springer.
  • Razavi, B. (2001). Design of Analog CMOS Integrated Circuits. McGraw-Hill.
  • Streetman, B. G., & Banerjee, S. (2006). Solid State Electronic Devices. Pearson.
  • Schleicher, E. (2017). Introduction to Semiconductor Devices. Wiley.
  • Johnson, B. R. (2011). Analog Integrated Circuit Design. IET.
  • Kumar, A., & Chandrashekar, P. (2019). Modern Semiconductor Devices. CRC Press.
  • Razavi, B. (2001). Design of Analog CMOS Integrated Circuits. McGraw-Hill.

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