Procedure 1 Nominal Measure 22K 2168047K 472931K 97947046552

Procedure1 Nominalmeasure22k2168047k472931k97947046552 Vc 34731 V

Identify the core assignment task: perform an experimental analysis involving transistors and resistors, measuring voltages, currents, and calculating theoretical values to compare with experimental data. The task includes analyzing a bipolar junction transistor (BJT) circuit, calculating parameters, and discussing the results. There are also optional bonus components involving circuit simulation and gain calculations.

Paper For Above instruction

The primary objective of this experiment is to analyze and verify the behavior of a bipolar junction transistor (BJT) circuit, specifically the 2N3904 NPN transistor, by measuring voltages and currents across various circuit components and comparing these measurements with theoretical predictions. This experiment aims to reinforce fundamental concepts of transistor operation, including biasing, load line analysis, current gain, and the application of Thevenin’s theorem to analyze transistor bias circuits.

Data collection involves measuring the resistances of the resistors R1, R2, RC, and RE, as well as the voltage drops across these components and the terminals of the transistor (VC, VE, VB). The measurements include collector current (IC), base current (IB), emitter current (IE), and the collector-emitter voltage (VCE). Once the measured values are obtained, theoretical analysis follows to predict these values based on known parameters such as supply voltage VCC, resistor values, and transistor characteristics.

In the theoretical calculations, the use of Thevenin’s theorem allows simplifying the biasing network for the transistor. By calculating the Thevenin equivalent voltage and resistance seen at the base, the base current IB can be predicted using the transistor’s forward voltage VBE, typically about 0.7V for silicon BJTs. From IB, the collector current IC is determined using the current gain parameter ï¢ (hFE), assumed to be 150 in calculations. The emitter current IE is then derived from IB and IC, as IE = IB + IC. The theoretical values of voltages and currents are compared with experimental data, and the percentage errors are computed to analyze the accuracy of the theoretical models.

The DC load line is plotted based on the measured and calculated voltages and currents, with the quiescent point (Q-point) identified. This visual representation helps in understanding the transistor’s operation region and the maximum symmetrical swing of IC if an AC signal were amplified. The maximum active region swing is determined by the collector supply voltage VCC, the collector resistor RC, and the emitter resistor RE, considering the transistor’s cutoff and saturation limits.

Discussion of the results involves comparing the theoretical and measured data, interpreting the significance of any discrepancies, and evaluating the assumptions made during calculations. For instance, the transistor’s ï¢ (current gain) value is compared to its datasheet value, which may vary with operating conditions. The experiment’s results serve to reinforce the understanding of transistor biasing, the effect of resistor values on circuit operation, and the importance of accurate component measurements.

The bonus sections include simulating the circuit in Multisim to verify measured values and comparing simulated results with experimental data. Additionally, calculating the theoretical no-load gain of the circuit involves analyzing the small-signal parameters and deriving the voltage gain potential of the configuration. These enhancements provide a comprehensive understanding of the circuit’s behavior under both theoretical and practical conditions, supporting the development of advanced circuit analysis skills.

References

• Sedra, A. S., & Smith, K. C. (2014). Microelectronic Circuits (7th ed.). Oxford University Press.
• Roth, C. H., & Kinney, L. (2013). Fundamentals of Electronic Circuits. Cengage Learning.
• Millman, J., & Grabel, A. (1987). Microelectronics. McGraw-Hill.
• Boyle, D. (2018). Electronic Devices and Circuit Theory. Pearson.
• Malvino, A. P., & Leach, D. P. (2007). Digital Principles and Applications. McGraw-Hill Education.
• Nicholls, E., & Khalil, D. (2000). Electronics World. Newnes.
• Holt, S., & Madsen, K. (2002). Fundamentals of Electronic Devices. CRC Press.
• Horowitz, P., & Hill, W. (2015). The Art of Electronics (3rd ed.). Cambridge University Press.
• Horowitz, P., & Hill, W. (1989). The Art of Electronics. Cambridge University Press.
• Texas Instruments. (2020). 2N3904 Datasheet. Retrieved from https://www.ti.com/lit/ds/symlink/2n3904.pdf